Layered Semiconductor Bi2O2Se for Broadband Pulse Generation in the Near-Infrared

被引：16

作者：

Xu, Rui ^{[1
]}

Wang, Sheng ^{[1
]}

Li, Yao ^{[1
]}

Chen, Hanning ^{[1
]}

Tong, Tong ^{[1
]}

Cai, Yu ^{[2
]}

Meng, Yafei ^{[1
]}

Zhang, Zuxing ^{[2
]}

Wang, Xuefeng ^{[1
]}

Wang, Fengqiu ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210023, Jiangsu, Peoples R China

[2] Nanjing Univ Posts & Telecommun, Sch Optoelect Engn, Nanjing 210023, Jiangsu, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2019年 / 31卷 / 13期

基金：

中国国家自然科学基金;

关键词：

Pulsed fiber laser; saturable absorber; modelocked lasers; SATURABLE ABSORBER; MODE-LOCKING; TOPOLOGICAL INSULATOR; GRAPHENE; MOBILITY;

D O I：

10.1109/LPT.2019.2917472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the broadband nonlinear optical properties of layered semiconductor Bi2O2Se prepared by the modified Bridgman method. The saturable absorber exhibits a modulation depth of 12.2%, a nonsaturable loss of 62.2%, and a saturable intensity of 26 MW/cm(2) at 1.55 mu m. With respect to 2-mu m band, the absorber shows a modulation depth of 9.1%, a nonsaturable loss of 71%, and a saturable intensity of 44.2 MW/cm(2). In addition, mode-locked Er-fiber laser and Q-switched Tm-fiber laser employing the saturable absorber were first demonstrated at 1.55 and 2 mu m, respectively. Our experimental results have revealed that the Bi2O2Se can be a promising broadband saturable absorber for pulsed lasers in the near-infrared range.

引用

页码：1056 / 1059

页数：4

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