Microstructure of InxGa1-xN nanorods grown by molecular beam epitaxy

被引:1
作者
Webster, R. F. [1 ]
Soundararajah, Q. Y. [1 ]
Griffiths, I. J. [1 ]
Cherns, D. [1 ]
Novikov, S. V. [2 ]
Foxon, C. T. [2 ]
机构
[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England
[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
基金
英国工程与自然科学研究理事会;
关键词
III-nitrides; molecular beam epitaxy; characterization; nanostrutures;
D O I
10.1088/0268-1242/30/11/114014
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Transmission electron microscopy is used to examine the structure and composition of InxGa1-xN nanorods grown by plasma-assisted molecular beam epitaxy. The results confirm a core-shell structure with an In-rich core and In-poor shell resulting from axial and lateral growth sectors respectively. Atomic resolution mapping by energy-dispersive x-ray microanalysis and high angle annular dark field imaging show that both the core and the shell are decomposed into Ga-rich and In-rich platelets parallel to their respective growth surfaces. It is argued that platelet formation occurs at the surfaces, through the lateral expansion of surface steps. Studies of nanorods with graded composition show that decomposition ceases for x >= 0.8 and the ratio of growth rates, shell: core, decreases with increasing In concentration.
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页数:5
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