Optical and electro-optical investigation of low-temperature grown GaAs

被引：8

作者：

Dankowski, SU

Kiesel, P

Ruff, M

Streb, D

Tautz, S

Keil, UD

Sorensen, CB

Knupfer, B

Kneissl, M

Dohler, GH

机构：

[1] TECH UNIV DENMARK,MIKROELEKTRON CTR,DK-2800 LYNGBY,DENMARK

[2] NIELS BOHR INST,ORSTED LAB,DK-2100 COPENHAGEN,DENMARK

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期

关键词：

low temperature grown GaAs; optical properties; growth temperature; arsenic source;

D O I：

10.1016/S0921-5107(96)01748-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the effects of growth temperature, arsenic source and post growth annealing treatment on the optical properties of low temperature grown GaAs. We have determined the absorption coefficient over a wide spectral range of energies between 0.8 and 2.0 eV. Special interest was dedicated to the shape of the band edge absorption for the different growth conditions and post growth treatments. The band edge is sharper for samples grown with an As4( )source than for samples grown using As-2. However, the band edge becomes sharper due to the annealing process for all samples. A sharp band edge is essential fora high-contrast electro-optical modulator. We also measured the electro-absorption of a metal-semiconductor-metal structure based on annealed LT-GaAs and achieved a contrast ratio of 1:1.35 corresponding to an absorption change of 2300 cm(-1). (C) 1993 Elsevier Science S.A.

引用

页码：316 / 319

页数：4

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