Tunneling magnetoresistance in planar ferromagnetic junctions

被引：4
作者：
Wilczynski, M
Barnas, J
机构：
[1] Warsaw Univ Technol, Inst Phys, PL-00662 Warsaw, Poland
[2] Adam Mickiewicz Univ, Dept Phys, PL-61614 Poznan, Poland
来源：
ACTA PHYSICA POLONICA A | 2000年 / 97卷 / 03期
关键词：
D O I：
10.12693/APhysPolA.97.443
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Bias dependence of the tunnel magnetoresistance in simple planar ferromagnetic junctions is considered theoretically within the one-band model. The limit of sequential tunnelling in double junctions with a non-magnetic central electrode is studied as well. In this case tunnel magnetoresistance exists only when the spin relaxation time due to spin-flip scattering processes inside the central electrode is sufficiently long.
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页码：443 / 446
页数：4
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