Superlattice-like GeTe/Sb thin film for ultra-high speed phase change memory applications

被引：13
作者：
Hu, Yifeng [1 ]
You, Haipeng [1 ]
Zhu, Xiaoqin [1 ]
Zou, Hua [1 ]
Zhang, Jianhao [1 ]
Song, Sannian [2 ]
Song, Zhitang [2 ]
机构：
[1] Jiangsu Univ Technol, Sch Math & Phys, Changzhou 213001, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2017年 / 457卷
关键词：
GeTe/Sb thin film; Ultra-high speed; Phase change memory;
D O I：
10.1016/j.jnoncrysol.2016.11.034
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The GeTe/Sb superlattice-like thin films are systematically investigated for the potential application in phase change memory. Compared with GeTe, GeTe/Sb film has lower crystallization temperature and activation energy. Besides, the internal stress of GeTe/Sb is less than GeTe during the crystallization. The superlattice-like structure is observed by transmission electron microscopy. The polycrystalline phase is confirmed by selected area electron diffraction. The reversible resistance switching can be realized for GeTe/Sb-based phase change memory device with an electric pulse of 8 ns width. In addition, GeTe/Sb shows a good endurance of 63 x 10(6) cycles. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：141 / 144
页数：4
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