Neutron irradiation effects in undoped n-AlGaN

被引：9

作者：

Polyakov, A. Y.

Smirnov, N. B.

Govorkov, A. V.

Markov, A. V.

Kolin, N. G.

Boiko, V. M.

Merkurisov, D. I.

Pearton, S. J.

机构：

[1] Inst Rare Met, Moscow 119017, Russia

[2] Fed State Unitary Enterprise, LY Karpov Phys Chem Res Inst, Obninsk Branch, Obninsk 249033, Russia

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1116/1.2188407

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of fast neutron (energy > 0.1 MeV) irradiation on electrical properties and deep level spectra of undoped n-AlGaN films with A1 mole fraction x=0.4 are presented. In virgin samples, the properties are strongly influenced by deep traps at E-c-0.25 eV present in high concentrations (similar to 2.5 X 10(18) cm(-3)). Neutron irradiation with doses higher than 10(15) cm(-2) leads to compensation of these centers with a removal rate of about 500 cm(-1). After neutron irradiation with high dose of 1.7 X 10(17) cm(-2) the samples become resistive (> 10(4) Omega cm), with the Fermi level pinned by new centers near E-c-0.35 eV introduced by irradiation with a rate of about 10 cm(-1). The neutron irradiation also gives rise to an increase of the concentration of deep hole traps with activation energy of 1 eV. (c) 2006 American Vacuum Society.

引用

页码：1094 / 1097

页数：4

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