机构:
Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USARensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
Chowdhury, Sauvik
[1
]
Stum, Zachary
论文数: 0引用数: 0
h-index: 0
机构:
Gen Elect Global Res, Niskayuna 12309, NY USARensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
Stum, Zachary
[2
]
Li, Zhongda
论文数: 0引用数: 0
h-index: 0
机构:
Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USARensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
Li, Zhongda
[1
]
Ueno, Katsunori
论文数: 0引用数: 0
h-index: 0
机构:
Adv Power Dev Res Assoc, Nishi ku, Yokohama, Kanagawa 2200073, JapanRensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
Ueno, Katsunori
[3
]
Chow, T. Paul
论文数: 0引用数: 0
h-index: 0
机构:
Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USARensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
Chow, T. Paul
[1
]
机构:
[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
[2] Gen Elect Global Res, Niskayuna 12309, NY USA
[3] Adv Power Dev Res Assoc, Nishi ku, Yokohama, Kanagawa 2200073, Japan
来源:
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2
|
2014年
/
778-780卷
关键词:
4H-SiC;
GaN;
HEMT;
UMOSFET;
D O I:
10.4028/www.scientific.net/MSF.778-780.971
中图分类号:
O7 [晶体学];
学科分类号:
0702 ;
070205 ;
0703 ;
080501 ;
摘要:
In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.