Comparison of 600V Si, SiC and GaN power devices

被引：31

作者：

Chowdhury, Sauvik ^{[1
]}

Stum, Zachary ^{[2
]}

Li, Zhongda ^{[1
]}

Ueno, Katsunori ^{[3
]}

Chow, T. Paul ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

[2] Gen Elect Global Res, Niskayuna 12309, NY USA

[3] Adv Power Dev Res Assoc, Nishi ku, Yokohama, Kanagawa 2200073, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

4H-SiC; GaN; HEMT; UMOSFET;

D O I：

10.4028/www.scientific.net/MSF.778-780.971

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.

引用

页码：971 / +

页数：2

共 6 条

[1]

Bolotnikov A., 2012, ISPSD 2012, P389

[2] SiC and GaN bipolar power devices [J].

Chow, TP ;

Khemka, V ;

Fedison, J ;

Ramungul, N ;

Matocha, K ;

Tang, Y ;

Gutmann, RJ .

SOLID-STATE ELECTRONICS, 2000, 44 (02) :277-301

[3] Status and prospects for SiC power MOSFETs [J].

Cooper, JA ;

Melloch, MR ;

Singh, R ;

Agarwal, A ;

Palmour, JW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (04) :658-664

[4] Magnetic field dependent Hall data analysis of electron transport in modulation-doped AlGaN/GaN heterostructures [J].

Dziuba, Z ;

Antoszewski, J ;

Dell, JM ;

Faraone, L ;

Kozodoy, P ;

Keller, S ;

Keller, B ;

DenBaars, SP ;

Mishra, UK .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (06) :2996-3002

[5]

Matocha K., 2010, ISPSD 10 P JUN 6 10, P365

[6] 10-kV 123-mΩ.cm2 4h-sic Power DMOSFETS [J].

Ryu, SH ;

Krishnaswami, S ;

O'Loughlin, M ;

Richmond, J ;

Agarwal, A ;

Palmour, J ;

Hefner, AR .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (08) :556-558

← 1 →