Comparison of 600V Si, SiC and GaN power devices

被引：29

作者：

Chowdhury, Sauvik ^{[1
]}

Stum, Zachary ^{[2
]}

Li, Zhongda ^{[1
]}

Ueno, Katsunori ^{[3
]}

Chow, T. Paul ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

[2] Gen Elect Global Res, Niskayuna 12309, NY USA

[3] Adv Power Dev Res Assoc, Nishi ku, Yokohama, Kanagawa 2200073, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

4H-SiC; GaN; HEMT; UMOSFET;

D O I：

10.4028/www.scientific.net/MSF.778-780.971

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper the DC and switching performance of 600V Si, SiC and GaN power devices using device simulation. The devices compared are Si superjunction MOSFET, Si field stop IGBT, SiC UMOSFET and GaN HEMT.

引用

页码：971 / +

页数：2

共 50 条

[1] Commercialization of High 600V GaN-on-Silicon Power Devices
Parikh, Primit
Wu, Yifeng
Shen, Likun
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 1174 - 1179
[2] Robustness in Short-Circuit Mode: Benchmarking of 600V GaN HEMTs with Power Si and SiC MOSFETs
Badawi, Nasser
Awwad, Abdullah Eial
Dieckerhoff, Sibylle
2016 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE), 2016,
[3] Robustness Aspects of 600V GaN-on-Si Based Power Cascoded HFET
Veereddya, Deepak
McDonald, Tim
Ambrush, John
Diyh, Alfonso
Cardwell, Stuart
Pandyaa, Bhargav
Gargb, Reenu
Imam, Mohamed
2016 IEEE 4TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2016, : 162 - 167
[4] Switching Behavior and Comparison of 600V SMD Wide Bandgap Power Devices
Meissner, Markus
Schmitz, Jan
Bernet, Steffen
2020 22ND EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'20 ECCE EUROPE), 2020,
[5] 600V GaN Schottky Barrier Power Devices for High Volume and Low Cost Applications
Liu, Linlin
Zhu, TingGang
Murphy, Michael
Pabisz, Marek
Pophristic, Milan
Peres, Boris
Hierl, Tom
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1251 - 1256
[6] An Experimental Comparison of GaN, SiC and Si Switching Power Devices
Palmer, Patrick
Zhang, Xueqiang
Shelton, Edward
Zhang, Tianqi
Zhang, Jin
IECON 2017 - 43RD ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, 2017, : 780 - 785
[7] Deep trench isolation for 600V SOI power devices
Clavelier, L
Charlet, B
Giffard, B
Roy, M
ESSDERC 2003: PROCEEDINGS OF THE 33RD EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2003, : 497 - 500
[8] The Characteristics and Modeling of 600V and 1200V SiC Power MOSFET
Chen, Hong
Hao, Jilong
Zhou, QianFei
Feng, Qi
Bai, Yun
2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 353 - 355
[9] Reverse Bias Lifetime Analysis of 600V Enhancement Mode GaN Devices
Kannan, Hari
Veereddy, Deepak
Wang, Zhaofeng
Khalil, Sameh
Charles, Alain
Kim, Hyeongnam
Imam, Mohamed
2017 IEEE 5TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2017, : 44 - 47
[10] Evaluation and Applications of 600V/650V Enhancement-Mode GaN Devices
Huang, Xiucheng
Liu, Tao
Li, Bin
Lee, Fred C.
Li, Qiang
WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS, 2015, : 113 - 118

← 1 2 3 4 5 →