Fabrication Optimization to Improve Performance of Gallium-doped Zinc Oxide Thin Film Transistors

被引：0

作者：

Zhang, Suoming ^{[1
]}

Han, Dedong ^{[1
]}

Wang, Shuyang ^{[1
]}

Tian, Yu ^{[1
]}

Shan, Dongfang ^{[1
]}

Huang, Fuqing ^{[1
]}

Cong, Yingying ^{[1
]}

Zhang, Shengdong ^{[1
]}

Zhang, Xing ^{[1
]}

Wang, Yi ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS | 2013年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We reported the bottom gate type fully transparent Ga-doped ZnO TFTs fabricated on glass substrate at room temperature. The effect of O-2/Ar ratio during channel layer deposition on the electrical properties of the device was investigated. The results showed that the TFTs fabricated at O-2/Ar ratio of 25/75 exhibited the best characteristic with the saturation mobility of 14.15cm(2)/V.s, the subthreshold swing (SS) of 422mV/dec, the threshold voltage (V-t) of 4.9V and the on/off current ratio of 2x10(7). Futhermore, the effect of post-annealing temperature was studied, too. It turned out the properties of TFTs were improved after post-annealing, and which reached the best after 250 degrees C post-annealing, with the saturation mobility of 262.49 cm(2)/V.s, the subthreshold swing of 138mV/dec, the threshold voltage of 3V and the on/off current ratio of 2x10(9).

引用

页码：121 / 124

页数：4

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