Length Dependent Transition of the Dominant 1/f Noise Mechanism in Si-Passivated Ge-on-Si pMOSFETs

被引：0
|
作者：
Simoen, E. [1 ]
Firrincieli, A. [1 ]
Leys, F. E. [1 ]
Loo, R. [1 ]
De Jaeger, B. [1 ]
Mitard, J. [1 ]
Claeys, C. [1 ]
机构：
[1] IMEC, B-3001 Louvain, Belgium
来源：
NOISE AND FLUCTUATIONS | 2009年 / 1129卷
关键词：
germanium; MOSFETs; 1/f noise; silicon passivation; METAL GATE; PERFORMANCE;
D O I：
暂无
中图分类号：
Q6 [生物物理学];
学科分类号：
071011 ;
摘要：
The impact of the Si passivation on the low-frequency noise of Ge-on-Si pMOSFETs is investigated. A transition from number to mobility fluctuations dominated 1/f noise is found going from shorter to longer channel transistors.
引用
收藏
页码：281 / 284
页数：4
相关论文
共 21 条
  • [1] Impact of Si-Thickness on Interface and Device Properties for Si-passivated Ge pMOSFETs
    Martens, Koen
    Mitard, Jerome
    De Jaeger, Brice
    Meuris, Marc
    Maes, Herman
    Groeseneken, Guido
    Minucci, Franco
    Crupi, Felice
    ESSDERC 2008: PROCEEDINGS OF THE 38TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2008, : 138 - +
  • [2] TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology
    Norris, D. J.
    Ross, I. M.
    Cullis, A. G.
    Walther, T.
    Myronov, M.
    Dobbie, A.
    Whall, T.
    Parker, E. H. C.
    Leadley, D. R.
    De Jaeger, B.
    Lee, W.
    Meuris, M.
    ELECTRON MICROSCOPY AND ANALYSIS GROUP CONFERENCE 2009 (EMAG 2009), 2010, 241
  • [3] 1/f noise in Si and Si0.7Ge0.3 pMOSFETs
    von Haartman, M
    Lindgren, AC
    Hellström, PE
    Malm, G
    Zhang, SL
    Östling, M
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (12) : 2513 - 2519
  • [4] The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-Passivated Ge pMOSFETs
    Caymax, Matty
    Leys, Frederik
    Mitard, Jerome
    Martens, Koen
    Yang, Lijun
    Pourtois, Geoffrey
    Vandervorst, Wilfried
    Meuris, Marc
    Loo, Roger
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (12) : H979 - H985
  • [5] The Influence of the Epitaxial Growth Process Parameters on Layer Characteristics and Device Performance in Si-passivated Ge pMOSFETs
    Caymax, Matty
    Leys, Frederik
    Mitard, Jerome
    Martens, Koen
    Yang, Lijun
    Pourtois, Geoffrey
    Vandervorst, Wilfried
    Meuris, Marc
    Loo, Roger
    ADVANCED GATE STACK, SOURCE/DRAIN, AND CHANNEL ENGINEERING FOR SI-BASED CMOS 5: NEW MATERIALS, PROCESSES, AND EQUIPMENT, 2009, 19 (01): : 183 - +
  • [6] Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs
    Prest, MJ
    Palmer, MJ
    Grasby, TJ
    Phillips, PJ
    Mironov, OA
    Parker, EHC
    Whall, TE
    Waite, AM
    Evans, AGR
    Watling, JR
    Asenov, A
    Barker, JR
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 89 (1-3): : 444 - 448
  • [7] Defect-Related Excess Low-Frequency Noise in Ge-on-Si pMOSFETs
    Simoen, E.
    Mitard, J.
    De Jaeger, B.
    Eneman, G.
    Dobbie, A.
    Myronov, M.
    Leadley, D. R.
    Meuris, M.
    Hoffmann, T.
    Claeys, C.
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (01) : 87 - 89
  • [8] 1/f noise in Si0.8Ge0.2 pMOSFETs under Fowler-Nordheim stress
    Song, YJ
    Lim, JW
    Mheen, B
    Kim, SH
    Bae, HC
    Kang, JY
    Kim, JH
    Song, JI
    Park, KW
    Shim, KW
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2003, 50 (04) : 1152 - 1156
  • [9] DC and RF characteristics of Si0.8Ge0.2 pMOSFETs:: Enhanced operation speed and low 1/f noise
    Song, YJ
    Shim, KH
    Kang, JY
    Cho, KI
    ETRI JOURNAL, 2003, 25 (03) : 203 - 209
  • [10] A unified model for the 1/f noise induced by threading dislocation in strained-Si pMOSFETs
    Yang, Hong-Dong
    Li, Jing-Chun
    Yang, Mo-Hua
    2007 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, CIRCUITS AND SYSTEMS PROCEEDINGS, VOLS 1 AND 2: VOL 1: COMMUNICATION THEORY AND SYSTEMS; VOL 2: SIGNAL PROCESSING, COMPUTATIONAL INTELLIGENCE, CIRCUITS AND SYSTEMS, 2007, : 563 - +
123