Pulsed laser deposition of praseodymium oxide films on silicon(100)

被引：6

作者：

Ratzke, M

Wolfframm, D

Arguirov, T

Kappa, M

Reif, J

机构：

[1] Brandenburg Tech Univ Cottbus, LS Expt Phys 2, D-03044 Cottbus, Germany

[2] JointLab IHP BTU, D-03044 Cottbus, Germany

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2004年 / 79卷 / 4-6期

关键词：

Oxide; Spectroscopy; Silicon; Thin Film; SiO2;

D O I：

10.1007/s00339-004-2728-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, pulsed laser deposition (PLD) was used to deposit thin films of high-k dielectric praseodymium oxide on silicon(100). Photoluminescence spectroscopy (PL) shows the possibility of activating crystal defects in the Si substrate during the PLD process. Capacitance-Voltage (C-V) measurements yield an average dielectric constant of k=33 for PrxOy films of different thicknesses. The leakage current is orders of magnitude lower than for SiO2.

引用

收藏

页码：1247 / 1249

页数：3

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