Disordered zinc in Zn4Sb3 with phonon-glass and electron-crystal thermoelectric properties

被引:764
|
作者
Snyder, GJ
Christensen, M
Nishibori, E
Caillat, T
Iversen, BB
机构
[1] CALTECH, Pasadena, CA 91125 USA
[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[3] Aarhus Univ, Dept Chem, DK-8000 Aarhus, Denmark
[4] Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, Japan
基金
美国国家航空航天局; 美国国家科学基金会;
关键词
D O I
10.1038/nmat1154
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
By converting waste heat into electricity, thermoelectric generators could be an important part of the solution to today's energy challenges. The compound Zn4Sb3 is one of the most efficient thermoelectric materials known. Its high efficiency results from an extraordinarily low thermal conductivity in conjunction with the electronic structure of a heavily doped semiconductor. Previous structural studies have been unable to explain this unusual combination of properties. Here, we show through a comprehensive structural analysis using single-crystal X-ray and powder-synchrotron-radiation diffraction methods, that both the electronic and thermal properties of Zn4Sb3 can be understood in terms of unique structural features that have been previously overlooked. The identification of Sb3- ions and Sb-2(4-) dimers reveals that Zn4Sb3 is a valence semiconductor with the ideal stoichiometry Zn13Sb10. In addition, the structure contains significant disorder, with zinc atoms distributed over multiple positions. The discovery of glass-like interstitial sites uncovers a highly effective mechanism for reducing thermal conductivity. Thus Zn4Sb3 is in many ways an ideal 'phonon glass, electron crystal' thermoelectric material.
引用
收藏
页码:458 / 463
页数:6
相关论文
共 50 条
  • [1] Disordered zinc in Zn4Sb3 with phonon-glass and electron-crystal thermoelectric properties
    G. Jeffrey Snyder
    Mogens Christensen
    Eiji Nishibori
    Thierry Caillat
    Bo Brummerstedt Iversen
    Nature Materials, 2004, 3 : 458 - 463
  • [2] The structure of α-Zn4Sb3: Ordering of the phonon-glass thermoelectric material β-Zn4Sb3
    1600, American Chemical Society, Columbus, United States (126):
  • [3] The structure of α-Zn4Sb3:: Ordering of the phonon-glass thermoelectric material β-Zn4Sb3
    Nylén, J
    Andersson, M
    Lidin, S
    Häussermann, U
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2004, 126 (50) : 16306 - 16307
  • [4] Phonon-glass electron-crystal thermoelectric clathrates: Experiments and theory
    Takabatake, Toshiro
    Suekuni, Koichiro
    Nakayama, Tsuneyoshi
    REVIEWS OF MODERN PHYSICS, 2014, 86 (02) : 669 - 716
  • [5] Nanoscale α-structural domains in the phonon-glass thermoelectric material β-Zn4Sb3
    Kim, H. J.
    Bozin, E. S.
    Haile, S. M.
    Snyder, G. J.
    Billinge, S. J. L.
    PHYSICAL REVIEW B, 2007, 75 (13):
  • [6] High-pressure synthesis of phonon-glass electron-crystal featured thermoelectric LixCo4Sb12
    Zhang, Jianjun
    Xu, Bo
    Wang, Li-Min
    Yu, Dongli
    Yang, Jianqing
    Yu, Fengrong
    Liu, Zhongyuan
    He, Julong
    Wen, Bin
    Tian, Yongjun
    ACTA MATERIALIA, 2012, 60 (03) : 1246 - 1251
  • [7] Thermoelectric phonon-glass electron-crystal via ion beam patterning of silicon
    Zhu, Taishan
    Swaminathan-Gopalan, Krishnan
    Stephani, Kelly
    Ertekin, Elif
    PHYSICAL REVIEW B, 2018, 97 (17)
  • [8] Zintl phases as electron-crystal phonon-glass materials
    Kauzlarich, Susan
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2015, 250
  • [9] Colloidal nanostructures as building blocks for macroscopic thermoelectric materials with electron-crystal phonon-glass properties
    Scheele, Marcus
    Oeschler, Niels
    Meier, Katrin
    Kornowski, Andreas
    Klinke, Christian
    Weller, Horst
    THERMOELECTRIC MATERIALS 2010 - GROWTH, PROPERTIES, NOVEL CHARACTERIZATION METHODS AND APPLICATIONS, 2010, 1267
  • [10] High Thermoelectric Performance in Phonon-Glass Electron-Crystal Like AgSbTe2
    Taneja, Vaishali
    Das, Subarna
    Dolui, Kapildeb
    Ghosh, Tanmoy
    Bhui, Animesh
    Bhat, Usha
    Kedia, Dinesh Kumar
    Pal, Koushik
    Datta, Ranjan
    Biswas, Kanishka
    ADVANCED MATERIALS, 2024, 36 (06)