Heavy phosphorus doping by epitaxial growth on the (111) diamond surface

被引：51

作者：

Grotjohn, T. A. ^{[1
]}

Tran, D. T. ^{[1
]}

Yaran, M. K. ^{[2
]}

Demlow, S. N. ^{[1
]}

Schuelke, T. ^{[2
]}

机构：

[1] Michigan State Univ, E Lansing, MI 48824 USA

[2] Fraunhofer Ctr Coatings & Laser Applicat, E Lansing, MI 48824 USA

来源：

关键词：

Diamond film; n-type doping; Plasma CVD; CHEMICAL-VAPOR-DEPOSITION; HIGH-POWER-DENSITY; (001)-ORIENTED DIAMOND; ELECTRICAL-PROPERTIES; FILMS; LAYERS;

D O I：

10.1016/j.diamond.2014.02.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Semiconducting n-type diamond can be fabricated using phosphorus as a substitutional donor dopant. The dopant activation energy level at 0.58 eV is deep. At high dopant concentrations of 10(20) cm(-3) the activation energy reduces to less than 0.05 eV. Phosphorus doping at concentrations of 10(20) cm(-3) or higher has been achieved with epitaxial growth on the (111) diamond crystallographic surface. In this work epitaxial growth of diamond with high phosphorus concentrations exceeding 10(20) cm(-3) is performed using a microwave plasma-assisted chemical vapor deposition process with process conditions that include a pressure of 160 Torr. This pressure is higher than previous phosphorus doping reports of (111) surface diamond growth. The other growth conditions include a feedgas mixture of 0.25% methane and 500 ppm phosphine in hydrogen, and a substrate temperature of 950-1000 degrees C. The measured growth rate was 1.25 mu m/h. The room temperature resistivity of the heavily phosphorus doped diamond was 120-150 ohm-cm and the activation energy was 0.027 eV. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：129 / 133

页数：5

共 27 条

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