Strain-Induced Room-Temperature Ferromagnetic Semiconductors with Large Anomalous Hall Conductivity in Two-Dimensional Cr2Ge2Se6

被引：102

作者：

Dong, Xue-Juan ^{[1
]}

You, Jing-Yang ^{[1
]}

Gu, Bo ^{[2
,3
,4
]}

Su, Gang ^{[1
,2
,3
,4
]}

机构：

[1] Univ Chinese Acad Sci, Sch Phys Sci, Beijing 100049, Peoples R China

[2] Univ Chinese Acad Sci, Kavli Inst Theoret Sci, Beijing 100190, Peoples R China

[3] Univ Chinese Acad Sci, CAS Ctr Excellence Topol Quantum Computat, Beijing 100190, Peoples R China

[4] Huairou Natl Comprehens Sci Ctr, Phys Sci Lab, Beijing 101400, Peoples R China

来源：

PHYSICAL REVIEW APPLIED | 2019年 / 12卷 / 01期

基金：

国家重点研发计划; 中国国家自然科学基金;

关键词：

CRYSTAL;

D O I：

10.1103/PhysRevApplied.12.014020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

By density-functional-theory calculations, we predict a stable two-dimensional (2D) ferromagnetic semiconductor, Cr2Ge2Se6, where the Curie temperature TC can be dramatically increased beyond room temperature by applying a few-percent strain. In addition, the anomalous Hall conductivity in 2D Cr(2)Ge(2)Se(6)and Cr2Ge2Te6 is predicted to be comparable to that in the ferromagnetic metals Fe and Ni, and is an order of magnitude larger than that in the diluted magnetic semiconductor Ga(Mn, As). Based on superexchange interactions, the increased TC in 2D Cr2Ge2Se6 caused by strain can be understood by the decreased energy difference between 3d orbitals of Cr and 4p orbitals of Se. Our findings highlight the microscopic mechanism to obtain room-temperature ferromagnetic semiconductors by strain.

引用

页数：6

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