A Resistorless Low-Power Voltage Reference with Novel Curvature-Compensation Technique

被引：0

作者：

Zhou, Zekun ^{[1
]}

Yu, Hongming ^{[1
]}

Qian, Junlin ^{[1
]}

Shi, Yue ^{[2
]}

Zhang, Bo ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu, Sichuan, Peoples R China

[2] Chengdu Univ Informat Technol, Coll Commun Engn, Chengdu, Sichuan, Peoples R China

来源：

2019 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | 2019年

基金：

美国国家科学基金会;

关键词：

MOSFET-only voltage reference; Curvature Compensation; Low-power dissipation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a MOSFET-only voltage reference with novel curvature-compensation is proposed. In order to reduce the temperature coefficient in the proposed voltage reference, two proportional to absolute temperature voltages with opposite second-order order TC are added on a threshold voltage, which is achieved by a resistorless threshold voltage extractor. Besides, self-biased current source with feedback is realized at the same time, which can provide bias current for the whole voltage reference and enhance the performance of generated voltage reference without additional power consumption. Verification results of the proposed voltage reference implemented with 0.35 mu m technology process show that the temperature coefficient is 2.4 ppm/ with a temperature range of -20 to 80 is obtained, and a 62.9 dB power supply rejection ratio is achieved with a 68nA maximum supply current.

引用

页数：5

共 7 条

[1] Picowatt, 0.45-0.6 V Self-Biased Subthreshold CMOS Voltage Reference [J].