All-optical XOR gate using semiconductor optical amplifiers without additional input beam

被引：198

作者：

Kim, JH ^{[1
]}

Jhon, YM ^{[1
]}

Byun, YT ^{[1
]}

Lee, S ^{[1
]}

Woo, DH ^{[1
]}

Kim, SH ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Photon Res Ctr, Seoul 136791, South Korea

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 10期

关键词：

all-optical XOR gate; cross-gain modulation; semiconductor optical amplifier;

D O I：

10.1109/LPT.2002.801841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The novel design of an all-optical XOR gate by using cross-gain modulation of semiconductor optical amplifiers has been suggested and demonstrated successfully at 10 Gb/s. Boolean AB and AB of the two input signals A and B have been obtained and combined to achieve the all-optical XOR gate. No additional input beam such as a clock signal or continuous wave light is used in this new design, which is required in other all-optical XOR gates.

引用

页码：1436 / 1438

页数：3

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