Solidification refining of MG-Si by Al-Si alloy under rotating electromagnetic field with varying frequencies

被引：16

作者：

Ban, Boyuan ^{[1
]}

Zhang, Taotao ^{[2
]}

Li, Jingwei ^{[1
]}

Bai, Xiaolong ^{[1
]}

Pan, Xu ^{[1
]}

Chen, Jian ^{[1
]}

Tabaian, Seyed Hadi ^{[3
]}

机构：

[1] Chinese Acad Sci, Hefei Inst Phys Sci, Inst Appl Technol, Key Lab Photovolta & Energy Conservat Mat, Hefei 230031, Peoples R China

[2] Chinese Acad Sci, Hefei Inst Phys Sci, Inst Plasma Phys, Hefei 230031, Peoples R China

[3] Amirkabir Univ Technol, Dept Min & Met Engn, Tehran 1591634311, Iran

来源：

SEPARATION AND PURIFICATION TECHNOLOGY | 2018年 / 202卷

基金：

中国国家自然科学基金;

关键词：

Rotating electromagnetic field; Solidification; Refining; Al-Si alloy; METALLURGICAL-GRADE SILICON; MAGNETIC-FIELD; SEPARATION MECHANISM; BORON REMOVAL; MELT; PURIFICATION; ENRICHMENT; PHOSPHORUS; SYSTEM; PHASE;

D O I：

10.1016/j.seppur.2018.03.069

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

Aiming to develop an effective solidification purification process by Al-Si alloy refining method, experiments under rotating electromagnetic field (REMF) with varying frequencies have been carried out. High B/P removal rates under REMF can be confirmed. A primary Si-rich layer formed near the side surface of the sample, while the interior of the sample is mainly eutectic Si/Al. Effect of varying frequency of REMF on alloy structure, size of the primary Si flakes and B/P contents in the primary Si flakes are studied. An apparent segregation coefficient is introduced to describe refining process. The apparent segregation coefficients of B and P are determined to be 0.12 and 0.06 respectively when the frequency of REMF and the cooling rate are10 Hz and 50 mK s(-1) respectively.

引用

页码：266 / 274

页数：9

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