Microcrystalline silicon carbide thin films grown by HWCVD at different filament temperatures and their application in n-i-p microcrystalline silicon solar cells

被引：25

作者：

Chen, Tao ^{[1
,2
]}

Huang, Yuelong ^{[1
]}

Wang, Haiyan ^{[1
]}

Yang, Deren ^{[2
]}

Dasgupta, Arup ^{[1
]}

Carius, Reinhard ^{[1
]}

Finger, Friedhelm ^{[1
]}

机构：

[1] Forschungszentrum Julich, IEF Photovolta 5, D-52425 Julich, Germany

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

THIN SOLID FILMS | 2009年 / 517卷 / 12期

关键词：

Microcrystalline silicon carbide; Catalytic CVD; Hot-wire deposition; Thin film solar cells; SUBSTRATE TEMPERATURES; STRUCTURAL-PROPERTIES; WINDOW LAYERS; DEPOSITION; CVD;

D O I：

10.1016/j.tsf.2009.01.029

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To optimize the performance of microcrystalline silicon carbide (mu c-SiC:H) window layers in n-i-p type microcrystal line silicon (mu c-Si:H) solar cells, the influence of the rhenium filament temperature in the hot wire chemical vapor deposition process on the properties of mu c-SiC:H films and corresponding solar cells were studied. The filament temperature T(F) has a strong effect on the structure and optical properties of mu c-SiC:H films. Using these mu c-SiC:H films prepared in the range of T(F)=1800-2000 degrees C as window layers in n-side illuminated mu c-Si:H solar cells, cell efficiencies of above 8.0% were achieved with 1 mu m thick mu c-Si:H absorber layer and Ag back reflector. Crown Copyright (C) 2009 Plublished by Elsevier B.V. All rights reserved.

引用

页码：3513 / 3515

页数：3

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