Quantitative study of carbon doping of GaAs grown by metalorganic vapor-phase epitaxy

被引：2

作者：

Gong, YN ^{[1
]}

Mo, JJ ^{[1
]}

Yu, HS ^{[1
]}

Wang, L ^{[1
]}

Xia, GQ ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Met, Shanghai 200050, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 01期

关键词：

metalorganic vapor-phase epitaxy (MOVPE); carbon doping; carbon tetrachloride CCl4; GaAs; quantitative relation;

D O I：

10.1016/S0022-0248(99)00453-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Based on the analysis of experimental data from the atmospheric-pressure-metalorganic vapor-phase epitaxy (APMOVPE) of carbon-doped GaAs, using trimethylgallium (TMGa) and arsine (AsH3) as growth precursors and carbon tetrachloride (CCl4) as dopant precursor, the quantitative relation between control parameters, namely growth temperature and flow rates of CCl4 and AsH3, and hole concentration has been investigated and established, which is p = 5 x 10(8)F(CCl4) F(AsH3)(-1.5)exp(2 x 10(5)/RTg), with the flow rate of TMGa kept constant at 0.78 SCCM. Since this deduction was fully based on the experimental data obtained, the result can well demonstrate the existing doping characteristics, and also agree with the scattered individual expressions previously reported. Finally, an improved CCl4-doping mechanism for the MOVPE growth of GaAs has been presented. (C) 2000 Elsevier Science B.V. All rights reserved. PACS. 81.15.Gh: 68.55.Ln.

引用

页码：43 / 49

页数：7

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