Comment on "High-resolution core-level photoemission study on GaAs(111)B surfaces" [J. Appl. Phys. 101, 043516 (2007)]

被引：2

作者：

Farrell, H. H. ^{[1
]}

Schultz, B. D. ^{[2
]}

Palmstrom, C. J. ^{[3
]}

机构：

[1] Idaho Natl Lab, Idaho Falls, ID 83415 USA

[2] Int Technol Ctr, Raleigh, NC 27617 USA

[3] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 05期

关键词：

core levels; gallium arsenide; III-V semiconductors; photoelectron spectra; surface reconstruction; surface states; RECONSTRUCTIONS;

D O I：

10.1063/1.3082490

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoemission work by Nakamura [J. Appl. Phys. 101, 043516 (2007)] on the GaAs(111)B(root 19x root 19)R23 degrees surface shows that the surface region contains three different types of As atoms and two different types of Ga atoms. The outstanding feature of their data is the presence of Ga atoms in the outermost layer of the reconstruction, which they conclude is inconsistent with published models. However, there are two published models, which were not identified in the paper, that contain these top-layer Ga atoms. Additionally, one of the two models also contains three distinct types of As surface atoms and two distinct types of Ga surface atoms as identified experimentally by Nakamura [J. Appl. Phys. 101, 043516 (2007)].

引用

页数：2

共 7 条

[1] RECONSTRUCTIONS OF GAAS(1BAR1BAR1BAR) SURFACES OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].