A review on plasma-etch-process induced damage of HgCdTe

被引：17
|
作者：
Liu, Lingfeng [1 ,2 ]
Chen, Yiyu [1 ,2 ]
Ye, Zhenhua [1 ]
Ding, Ruijun [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Key Lab Infrared Imaging Mat & Detectors, Shanghai 200083, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100039, Peoples R China
来源：
INFRARED PHYSICS & TECHNOLOGY | 2018年 / 90卷
关键词：
Dry etching; Electron cyclotron resonance (ECR); Inductively coupled plasma (ICP); Etch-induced damage; HgCdTe; Type conversion; ELECTRON-CYCLOTRON-RESONANCE; BEAM-INDUCED CURRENT; CONDUCTIVITY TYPE CONVERSION; N-TYPE-CONVERSION; ASPECT RATIO; ION; JUNCTION; HG1-XCDXTE; CH4/H-2; CDXHG1-XTE;
D O I：
10.1016/j.infrared.2018.03.009
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Dry etching techniques with minimal etch induced damage are required to develop highly anisotropic etch for pixel delineation of HgCdTe infrared focal plane arrays (IRFPAs). High density plasma process has become the main etching technique for HgCdTe in the past twenty years, In this paper, high density plasma electron cyclotron resonance (ECR) and inductively coupled plasma (ICP) etching of HgCdTe are summarized. Common plasma-etch-process induced type conversion and related mechanisms are reviewed particularly. (C) 2018 Published by Elsevier B.V.
引用
收藏
页码：175 / 185
页数：11
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