High efficiency thin-film CuIn1-xGaxSe2 photovoltaic cells using a Cd1-xZnxS buffer layer

被引：92

作者：

Bhattacharya, R. N.

Contreras, M. A.

Egaas, B.

Noufi, R. N.

Kanevce, A.

Sites, J. R.

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 25期

关键词：

Buffer layers - Capacitance-voltage measurements - Thin-film solar cells;

D O I：

10.1063/1.2410230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have fabricated 19.52% thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices using single layer chemical bath deposited Cd1-xZnxS (CdZnS) buffer layer. The efficiency equals the world record for any thin-film solar cell and is achieved with reduced optical absorption in the window layer. Using current-voltage, quantum efficiency, and capacitance-voltage measurements, the CIGS/CdZnS device parameters are directly compared with those of CIGS/CdS devices fabricated with equivalent absorbers. (c) 2006 American Institute of Physics.

引用

页数：2