High efficiency thin-film CuIn1-xGaxSe2 photovoltaic cells using a Cd1-xZnxS buffer layer

被引：94

作者：

Bhattacharya, R. N.

Contreras, M. A.

Egaas, B.

Noufi, R. N.

Kanevce, A.

Sites, J. R.

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] Colorado State Univ, Dept Phys, Ft Collins, CO 80523 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 25期

关键词：

Buffer layers - Capacitance-voltage measurements - Thin-film solar cells;

D O I：

10.1063/1.2410230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors have fabricated 19.52% thin-film CuIn1-xGaxSe2 (CIGS)-based photovoltaic devices using single layer chemical bath deposited Cd1-xZnxS (CdZnS) buffer layer. The efficiency equals the world record for any thin-film solar cell and is achieved with reduced optical absorption in the window layer. Using current-voltage, quantum efficiency, and capacitance-voltage measurements, the CIGS/CdZnS device parameters are directly compared with those of CIGS/CdS devices fabricated with equivalent absorbers. (c) 2006 American Institute of Physics.

引用

页数：2

共 3 条

[1] 18.5% copper indium gallium diselenide (CIGS) device using single-layer, chemical-bath-deposited ZnS(O,OH) [J].

Bhattacharya, RN ;

Contreras, MA ;

Teeter, G .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2004, 43 (11B) :L1475-L1476

[2] Diode (characteristics in state-of-the-art ZnO/CdS/Cu(In1-xGax)Se2 solar cells [J].

Contreras, MA ;

Ramanathan, K ;

AbuShama, J ;

Hasoon, F ;

Young, DL ;

Egaas, B ;

Noufi, R .

PROGRESS IN PHOTOVOLTAICS, 2005, 13 (03) :209-216

[3]

CONTRERAS MA, 2003, P 3 WORLD C PHOT EN

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