Preparation of TiO2 thin films by sputtering applying electron cyclotron resonance plasma produced in arched magnetic mirrors

We have been able to produce electron cyclotron resonance plasmas for large-area processing in arched magnetic mirrors. Applying the plasmas to deposition of titanium dioxide thin films by reactive sputtering, we study the uniformity of deposition and crystal structures of the thin films by controlling the state of plasma. Sputtering voltage and target current are separately varied by changing the power of microwave. The deposition rate of films is lower at the center and higher at the edges of target. The crystal structure is in the rutile phase at the center and tends to be in the anatase phase at the edges. This tendency is changed by changing the state of plasma. (C) 2002 Elsevier Science Ltd. All rights reserved.