Optoelectronic properties n:CdS:In/p-Si heterojunction photodetector

被引：19

作者：

Al-Ani, Salwan K. J.

Ismail, Raid A.

Al-Ta'ay, Hana F. A.

机构：

[1] Al Mustansiriya Univ, Coll Sci, Dept Phys, Baghdad, Iraq

[2] Univ Technol Baghdad, Sch Appl Sci, Baghdad, Iraq

[3] Univ Baghdad, Coll Sci Women, Baghdad, Iraq

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2006年 / 17卷 / 10期

关键词：

13;

D O I：

10.1007/s10854-006-0028-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optoelectronic properties of CdS:In/Si anisotype heterojunction photodetector fabricated by depositing of polycrystalline CdS and indium doped CdS films used thermal resistive technique on clean monocrystalline p-type silicon substrates are presented. The effect of In diffusion temperature(T (d))in CdS layer on the optoelectronic characteristics of these devices has been studied. Two peaks situated at 650 and 800 nm with values of 0.32 and 0.43 A/W, respectively, were observed in the responsivity plot. Other optoelectronics properties such as detectivity, photovoltaic, and response time are also presented.

引用

页码：819 / 824

页数：6

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