Determination of g-factor in a quantum well channel with a strong Rashba effect

被引：8

作者：

Choi, Won Young ^{[1
,2
]}

Chang, Joonyeon ^{[1
]}

Lee, Jung Hoon ^{[1
]}

Koo, Hyun Cheol ^{[1
,2
]}

机构：

[1] Korea Inst Sci & Technol, Spin Convergence Res Ctr, Seoul 136791, South Korea

[2] Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 136701, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期

基金：

新加坡国家研究基金会;

关键词：

ELECTRON G-FACTOR; HETEROSTRUCTURE;

D O I：

10.1063/1.4856035

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using the Shubnikov-de Haas oscillation measurement, the g-factor of carriers in a strong Rashba system is observed. To determine g-factor of carriers in the InAs quantum well channel with a strong Rashba effect, the magnetic fields are simultaneously applied along the in-plane direction and the perpendicular direction. The perpendicular field drives the oscillation of conductance for measuring Rashba spin orbit interaction and the in-plane field parallel to the Rashba field interacts with Rashba effect and modifies the intrinsic Rashba parameter. The total field inside the channel is a combination of the Rashba field and the in-plane field, so the modification of Rashba parameter gives a g-factor value of similar to 13 in our system. (C) 2014 AIP Publishing LLC.

引用

页数：3

共 8 条

[1] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].