Method for compensation of extreme-ultraviolet multilayer defects

被引:29
作者
Ray-Chaudhuri, AK [1 ]
Cardinale, G
Fisher, A
Yan, PY
Sweeney, DW
机构
[1] Sandia Natl Labs, Livermore, CA 94550 USA
[2] Intel Corp, Santa Clara, CA USA
[3] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1999年 / 17卷 / 06期
关键词
D O I
10.1116/1.590947
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We propose the use of optical proximity correction on absorber features to compensate for the effect of subresolution multilayer defects that would otherwise induce a critical error in linewidth. Initial experiments have been performed which validate this concept. Process window simulations quantify the practical limits of this technique. (C) 1999 American Vacuum Society. [S0734-211X(99)19806-8].
引用
收藏
页码:3024 / 3028
页数:5
相关论文
共 5 条
[1]  
BURKHART S, COMMUNICATION
[2]   Sub-100-nm lithographic imaging with an EUV 10x microstepper [J].
Goldsmith, JEM ;
Berger, KW ;
Bozman, DR ;
Cardinale, GF ;
Folk, DR ;
Henderson, CC ;
O'Connell, DJ ;
Ray-Chaudhuri, AK ;
Stewart, KD ;
Tichenor, DA ;
Chapman, HN ;
Gaughan, R ;
Hudyma, RM ;
Montcalm, C ;
Spiller, EA ;
Taylor, JS ;
Williams, JD ;
Goldberg, KA ;
Gullikson, EM ;
Naulleau, P ;
Cobb, JL .
EMERGING LITHOGRAPHIC TECHNOLOGIES III, PTS 1 AND 2, 1999, 3676 :264-271
[3]   Extreme ultraviolet lithography [J].
Gwyn, CW ;
Stulen, R ;
Sweeney, D ;
Attwood, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06) :3142-3149
[4]   Method to determine printability of photomask defects and its use in phase-shift mask evaluations [J].
Mansfield, S ;
Ferguson, R ;
Liebmann, L ;
Molless, A ;
Wong, A .
18TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT, 1998, 3546 :651-660
[5]  
RAYCHAUDHURI AK, 1998, GORA