Influence of Cu on Transport Properties of Thermoelectric Thin Film Fabricated via Magnetron Co-sputtering Method

被引：1

作者：

Cao Li-Li ^{[1
]}

Wang Yao ^{[1
]}

Deng Yuan ^{[1
]}

Luo Bing-Wei ^{[1
]}

Zhu Wei ^{[1
]}

Shi Yong-Ming ^{[1
]}

Lin Zhen ^{[1
]}

机构：

[1] Beihang Univ, Sch Mat Sci & Engn, Beijing Key Lab Special Funct Mat & Films, Beijing 100191, Peoples R China

来源：

JOURNAL OF INORGANIC MATERIALS | 2014年 / 29卷 / 02期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

semiconductors; thin films; thermoelectric properties; magnetron sputtering; TEMPERATURE; ELECTRODEPOSITION;

D O I：

10.3724/SP.J.1077.2013.13385

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A simple magnetron co-sputtering method was used to fabricate Cu dispersed Bi0.5Sb1.5Te3 thin films, and the co-sputtering method was beneficial to the preferential growth of Bi0.5Sb1.5Te3 thin films along c-axis. Cu atoms were well-dispersed in the nano-structured materials. The electrical conductivity sharply increased with the increasing content of Cu due to the effect of Cu on transport property. For Cu target sputtering power of 20 W, a maximum power factor of 20 mu W/(cm.K-2) with an electrical conductivity of 15 x 10(4) S/m at 355 K were achieved.

引用

页码：215 / 219

页数：5

共 22 条

[1] Pulsed laser deposition of low-resistivity indium tin oxide thin films at low substrate temperature
Adurodija, FO
Izumi, H
Ishihara, T
Yoshioka, H
Matsui, H
Motoyama, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (5A): : 2710 - 2716
[2] Thermoelectric properties of n-type Bi2Te2.7Se0.3 and p-type Bi0.5Sb1.5Te3 thin films deposited by direct current magnetron sputtering
Bourgault, D.
Garampon, C. Giroud
Caillault, N.
Carbone, L.
Aymami, J. A.
[J]. THIN SOLID FILMS, 2008, 516 (23) : 8579 - 8583
[3] Cao H, 2012, APPL PHYS LETT, V101
[4] Quantum dot superlattice thermoelectric materials and devices
Harman, TC
Taylor, PJ
Walsh, MP
LaForge, BE
[J]. SCIENCE, 2002, 297 (5590) : 2229 - 2232
[5] Hindle P. H., 2001, SPRINGER SERIES MATE, P1
[6] The influence of post-deposition annealing on thermoelectric properties of Bi-Sb-Te films prepared by sputtering
Kim, Dong-Ho
Lee, Gun-Hwan
Kim, Ook-Joong
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (02) : 132 - 136
[7] Thermoelectric properties of Cu-dispersed bi0.5sb1.5te3
Kim, Il-Ho
Choi, Soon-Mok
Seo, Won-Seon
Cheong, Dong-Ik
[J]. NANOSCALE RESEARCH LETTERS, 2012, 7
[8] Kim W, 2006, APPL PHYS LETT, V88
[9] Electrodeposition of P-type BixSb2-xTey thermoelectric film from dimethyl sulfoxide solution
Li, Fei-Hui
Wang, Wei
[J]. ELECTROCHIMICA ACTA, 2010, 55 (17) : 5000 - 5005
[10] Effect of Annealing Temperature on the Thermoelectric Properties of the Bi0.5Sb1.5Te3 Thin Films Prepared by Radio-Frequency Sputtering
Lin, Huey-Jiuan
Kang, Kai-Jyun
Hwang, Jenn-Dong
Chu, Hsu-Shen
Huang, Hong-Hsin
Wang, Moo-Chin
[J]. METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, 2013, 44A (05): : 2339 - 2345

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