Intrinsic origin of interface states and band-offset profiling of nanostructured LaAlO3/SrTiO3 heterojunctions probed by element-specific resonant spectroscopies

被引：18

作者：

Drera, G. ^{[1
,2
]}

Salvinelli, G. ^{[1
,2
]}

Bondino, F. ^{[3
]}

Magnano, E. ^{[3
]}

Huijben, M. ^{[4
,5
]}

Brinkman, A. ^{[4
,5
]}

Sangaletti, L. ^{[1
,2
]}

机构：

[1] Univ Cattolica, I LAMP, I-25121 Brescia, Italy

[2] Univ Cattolica, Dipartimento Matemat & Fis, I-25121 Brescia, Italy

[3] TASC Lab, IOM CNR, I-34149 Trieste, Italy

[4] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[5] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

PHYSICAL REVIEW B | 2014年 / 90卷 / 03期

关键词：

ELECTRONIC-STRUCTURE; PHOTOEMISSION; OXIDE; HETEROSTRUCTURES; SURFACE;

D O I：

10.1103/PhysRevB.90.035124

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The origin of electronic states at the basis of the 2DEG found in conducting LaAlO3/SrTiO3 interfaces (5 u.c. LaAlO3) is investigated by resonant photoemission experiments at the Ti L-2,L-3 and La M-4,M-5 edges. As shown by the resonant enhancement at the Ti L-2,L-3 edge, electronic states at E-F receive a dominant contribution from Ti 3d states. Both Ti and La resonance effects in the valence-band region are used to estimate the valence-band maxima at the two sides of the junction. Through a comparison with the valence-band states of the LaAlO3 and SrTiO3 parent compounds, we reconstruct the band diagram of the heterojunction, which is revealed to be type I (straddling gap), with a large notch of the band profile at the interface as compared with the reference insulating (3 u.c. LaAlO3) interface.

引用

页数：10

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