Sol-gel synthesis and photoluminescence of p-type semiconductor Cr2O3 nanowires

被引：68

作者：

Cao, HQ ^{[1
]}

Qiu, XQ ^{[1
]}

Yu, LA ^{[1
]}

Zhao, MJ ^{[1
]}

Zhu, QM ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Chem, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 24期

关键词：

D O I：

10.1063/1.2213204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rhombohedral structure p-type semiconductor Cr2O3 nanowires were generated by sol-gel template technology with the diameters in the range of 100-300 nm and the lengths ca. 10 mu m. A sharp ultraviolet photoluminescence band (full width at half maximum=13.8 nm) at the wavelength of 385 nm (3.22 eV in photon energy) was observed, which was attributed to the transition involving 3d(3) electron of the Cr3+ ions.

引用

页数：3

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