Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density

被引：3

作者：

Tanaka, Takanori ^{[1
]}

Kawabata, Naoyuki ^{[1
]}

Mitani, Yoichiro ^{[1
]}

Tomita, Nobuyuki ^{[1
]}

Tarutani, Masayoshi ^{[2
]}

Kuroiwa, Takeharu ^{[3
]}

Toyoda, Yoshihiko ^{[1
]}

Imaizumi, Masayuki ^{[2
]}

Sumitani, Hiroaki ^{[2
]}

Yamakawa, Satoshi ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Himeji, Hyogo, Japan

[2] Mitsubishi Electr Corp, Power Device Works, Fukuoka, Japan

[3] Mitsubishi Electr Corp, Head Off, Tokyo, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

4H-SiC; Epitaxial growth; Basal plane dislocation; SILICON-CARBIDE;

D O I：

10.4028/www.scientific.net/MSF.778-780.91

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

SiC epitaxial layer with low basal plane dislocation (BPD) density of 0.2/cm(2) was successfully grown under higher C/Si ratio, which is found on the investigation about growth conditions. In order to study conversion mechanism of BPDs to threading edge dislocations (TEDs), angles between directions of BPD lines on a substrate and that of moving edges of steps ([11-20]) during growth were examined. Consequently, it was revealed that almost 98% of BPDs are converted to TEDs for the case of the absolute angles above 45 degrees. This high conversion ratio is considered to be induced by enhanced lateral growth under the higher C/Si ratio condition.

引用

页码：91 / +

页数：2

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