Integration Trends in Monolithic Power ICs: Application and Technology Challenges

被引:0
作者
Bergveld, Henk Jan [1 ]
Rose, Matthias [1 ]
机构
[1] NXP Semicond, Technol & Operat, Power Management, Eindhoven, Netherlands
来源
2015 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2015年
关键词
power management; CMOS; ESD protection; high-voltage devices; integrated passives; SILICON-CONTROLLED RECTIFIER; DC-DC CONVERTER; SWITCHED-CAPACITOR; VOLTAGE REGULATOR; BCD TECHNOLOGY; MIM CAPACITOR; 6; V; SOI; DENSITY; PACKAGE;
D O I
暂无
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
This paper highlights the general trend towards further monolithic integration in power applications by enabling power management and interfacing solutions in advanced CMOS nodes. The need to combine high-density digital circuits, power-management circuits and robust interfaces in a single technology platform requires the development of additional process options on top of baseline CMOS. Examples include high-voltage devices, devices to enable area-efficient ESD protection and integrated capacitors and inductors with high quality factors. The use of bipolar devices in these technologies for protection and control purposes in power applications is also addressed.
引用
收藏
页码:13 / 19
页数:7
相关论文
共 55 条
[1]  
[Anonymous], MONOLITHIC CAPACITIV
[2]  
[Anonymous], ISRN NEUROSCI, DOI DOI 10.1145/2485922.2485974
[3]  
[Anonymous], P IEEE INT TEL EN C
[4]  
Beck R, 2006, PROC EUR SOLID-STATE, P584
[5]   An Inductive Down Converter System-in-Package for Integrated Power Management in Battery-powered Applications [J].
Bergveld, H. J. ;
Karadi, R. ;
Nowak, K. .
2008 IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE, VOLS 1-10, 2008, :3335-3341
[6]  
Bergveld Henk Jan, 2009, Proceedings of the 2009 IEEE Energy Conversion Congress and Exposition. ECCE 2009, P3698, DOI 10.1109/ECCE.2009.5316334
[7]  
Boksteen BK, 2013, PROC INT SYMP POWER, P237, DOI 10.1109/ISPSD.2013.6694460
[8]  
Burton EA, 2014, APPL POWER ELECT CO, P432, DOI 10.1109/APEC.2014.6803344
[9]  
Chang H, 2012, PROC INT SYMP POWER, P217, DOI 10.1109/ISPSD.2012.6229062
[10]  
Chou HL, 2012, PROC INT SYMP POWER, P401, DOI 10.1109/ISPSD.2012.6229106