Quantum Confined Stark Effect in a GaAs/AlGaAs Nanowire Quantum Well Tube Device: Probing Exciton Localization

被引：20

作者：

Badada, Bekele H. ^{[1
]}

Shi, Teng ^{[1
]}

Jackson, Howard E. ^{[1
]}

Smith, Leigh M. ^{[1
]}

Zheng, Changlin ^{[2
]}

Etheridge, Joanne ^{[2
,3
]}

Gao, Qiang ^{[4
]}

Tan, H. Hoe ^{[4
]}

Jagadish, Chennupati ^{[4
]}

机构：

[1] Univ Cincinnati, Dept Phys, Cincinnati, OH 45221 USA

[2] Monash Univ, Monash Ctr Electron Microscopy, Clayton, Vic 3800, Australia

[3] Monash Univ, Dept Mat Engn, Clayton, Vic 3800, Australia

[4] Australian Natl Univ, Dept Elect Mat Engn, Res Sch Phys & Engn, Canberra, ACT 2601, Australia

来源：

NANO LETTERS | 2015年 / 15卷 / 12期

基金：

澳大利亚研究理事会; 美国国家科学基金会;

关键词：

Nanowires; heterostructures; quantum well; photocurrent; Stark effect; DOT; PHOTOCURRENT; ESCAPE; STATES;

D O I：

10.1021/acs.nanolett.5b04039

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this Letter, we explore the nature of exciton localization in single GaAs/AlGaAs nanowire quantum well tube (QWT) devices using photocurrent (PC) spectroscopy combined with simultaneous photoluminescence (PL) and photoluminescence excitation (PLE) measurements. Excitons confined to GaAs quantum well tubes of 8 and 4 nm widths embedded into an AlGaAs barrier are seen to ionize at high bias levels. Spectroscopic signatures of the ground and excited states confined to the QWT seen in PL, PLE, and PC data are consistent with simple numerical calculations. The demonstration of good electrical contact with the QWTs enables the study of Stark effect shifts in the sharp emission lines of excitons localized to quantum dot-like states within the QWT. Atomic resolution cross-sectional TEM measurements and an analysis of the quantum confined Stark effect of these dots provide insights into the nature of the exciton localization in these nanostructures.

引用

页码：7847 / 7852

页数：6

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