Surface lifetimes of Ga and growth behavior on GaN(0001) surfaces during molecular beam epitaxy

被引：54

作者：

Guha, S

Bojarczuk, NA

Kisker, DW

机构：

[1] IBM Research Division, Yorktown Heights

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 19期

关键词：

D O I：

10.1063/1.117349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a study of the desorption behavior of Ga on the GaN(0001) surface and the growth behavior of GaN during molecular beam epitaxy. A desorption activation energy of 2.2+/-0.2 eV is measured for Ga adatoms. Porous columnar features in theGaN microstructure are observed that are enhanced by higher growth temperatures and eliminated by growing Mg or Si doped GaN. We propose a model for this observation. (C) 1996 American Institute of Physics.

引用

收藏

页码：2879 / 2881

页数：3

相关论文

共 14 条

[1] INTERACTION OF GA AND AS2 MOLECULAR BEAMS WITH GAAS SURFACES [J].

ARTHUR, JR .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) :4032-&

[2] PROPERTIES OF GAN FILMS GROWN UNDER GA-RICH AND N-RICH CONDITIONS WITH PLASMA-ENHANCED MOLECULAR-BEAM EPITAXY [J].

BOTCHKAREV, A ;

SALVADOR, A ;

SVERDLOV, B ;

MYONG, J ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1995, 77 (09) :4455-4458

[3] METAL ATOM CERAMIC BINDING-ENERGIES [J].

BURNS, RP ;

GABRIEL, KA ;

PIERCE, DE .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1993, 76 (02) :273-278

[4] GROWTH OF GALLIUM NITRIDE THIN-FILMS BY ELECTRON-CYCLOTRON RESONANCE MICROWAVE PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY [J].

EDDY, CR ;

MOUSTAKAS, TD ;

SCANLON, J .

JOURNAL OF APPLIED PHYSICS, 1993, 73 (01) :448-455

[5]

EVANS KR, IN PRESS SOLID STATE

[6] MOLECULAR-BEAM EPITAXY GROWTH AND PROPERTIES OF GAN FILMS ON GAN/SIC SUBSTRATES [J].

HUGHES, WC ;

ROWLAND, WH ;

JOHNSON, MAL ;

FUJITA, S ;

COOK, JW ;

SCHETZINA, JF ;

REN, J ;

EDMOND, JA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1571-1577

[7] GROWTH OF ZINC BLENDE-GAN ON BETA-SIC COATED (001) SI BY MOLECULAR-BEAM EPITAXY USING A RADIO-FREQUENCY PLASMA DISCHARGE, NITROGEN FREE-RADICAL SOURCE [J].

LIU, H ;

FRENKEL, AC ;

KIM, JG ;

PARK, RM .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (10) :6124-6127

[8] Kinetics of nucleation in surfactant-mediated epitaxy [J].

Markov, I .

PHYSICAL REVIEW B, 1996, 53 (07) :4148-4155

[9] ACTIVATION ENERGY FOR SUBLIMATION OF GALLIUM NITRIDE [J].

MUNIR, ZA ;

SEARCY, AW .

JOURNAL OF CHEMICAL PHYSICS, 1965, 42 (12) :4223-&

[10] Surfactant-induced bond strengthening in As-grown film surfaces [J].

Nakamura, J ;

Konogi, H ;

Osaka, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (4A) :L441-L443