Physics-based mathematical conditioning of the MOSFET surface potential equation

被引：30

作者：

Wu, WM ^{[1
]}

Chen, TL

Gildenblat, G

McAndrew, CC

机构：

[1] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[2] Motorola Inc, Tempe, AZ 85284 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 07期

关键词：

Imref splitting; metal-oxide-semiconductor field-effect transistors (MOSFETs); surface potential;

D O I：

10.1109/TED.2004.829902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The traditional form of the implicit equation for the surface potential (phi(s)) in metal-oxide-semiconductor field-effect transistors (MOSFETs) works well except near the flatband point phi(s) = 0 where it is both unphysical and ill-conditioned mathematically. This represents a significant difficulty for recent surface potential-based models, which require phi(s) evaluation from the accumulation to the strong inversion region. Detailed physical analysis combined with two-dimensional numerical simulations is used to develop a physics-based well-conditioned version of the surface potential equation.

引用

页码：1196 / 1200

页数：5

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