High coherence and low cross-talk in a tileable 3D integrated superconducting circuit architecture

被引:18
作者
Spring, Peter A. [1 ,3 ]
Cao, Shuxiang [1 ]
Tsunoda, Takahiro [1 ,4 ,5 ]
Campanaro, Giulio [1 ]
Fasciati, Simone [1 ]
Wills, James [1 ]
Bakr, Mustafa [1 ]
Chidambaram, Vivek [1 ]
Shteynas, Boris [1 ]
Carpenter, Lewis [2 ,6 ]
Gow, Paul [2 ]
Gates, James [2 ]
Vlastakis, Brian [1 ,7 ]
Leek, Peter J. [1 ]
机构
[1] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
[2] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
[3] RIKEN, Ctr Emergent Matter Sci CEMS, Wako, Saitama 3510198, Japan
[4] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA
[5] Yale Univ, Dept Phys, New Haven, CT 06520 USA
[6] SUNY Polytech Inst, 100 Seymour Rd, Utica, NY 13502 USA
[7] Oxford Quantum Circuits, Thames Valley Sci Pk, Reading RG2 9LH, Berks, England
基金
英国工程与自然科学研究理事会;
关键词
LOW-FREQUENCY PLASMONS; SILICON;
D O I
10.1126/sciadv.abl6698
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We report high qubit coherence as well as low cross-talk and single-qubit gate errors in a superconducting circuit architecture that promises to be tileable to two-dimensional (2D) lattices of qubits. The architecture integrates an inductively shunted cavity enclosure into a design featuring nongalvanic out-of-plane control wiring and qubits and resonators fabricated on opposing sides of a substrate. The proof-of-principle device features four uncoupled transmon qubits and exhibits average energy relaxation times T-1 = 149(38) mu s, pure echoed dephasing times T-phi,T-e = 189(34) mu s, and single-qubit gate fidelities F= 99.982(4)% as measured by simultaneous randomized benchmarking. The 3D integrated nature of the control wiring means that qubits will remain addressable as the architecture is tiled to form larger qubit lattices. Band structure simulations are used to predict that the tiled enclosure will still provide a clean electromagnetic environment to enclosed qubits at arbitrary scale.
引用
收藏
页数:9
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