Atomic layer deposition of ZrO2 thin films using a new alkoxide precursor

被引：45

作者：

Matero, R

Ritala, M

Leskelä, M

Jones, AC

Williams, PA

Bickley, JF

Steiner, A

Leedham, TJ

Davies, HO

机构：

[1] Univ Helsinki, Dept Chem, FIN-00014 Helsinki, Finland

[2] Univ Liverpool, Dept Chem, Liverpool L69 3ZD, Merseyside, England

[3] Inorgtech Ltd, Mildenhall IP28 7DE, Suffolk, England

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2002年 / 303卷 / 01期

基金：

芬兰科学院;

关键词：

D O I：

10.1016/S0022-3093(02)00959-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Zirconium oxide thin films were grown by atomic layer deposition using a new type of Zr alkoxide: [Zr(O' Bu)(2)(dmae)(2)](2) (dmae is dimethylaminoethoxide). Water was used as the oxygen source. The films grown at 190-240 degreesC were amorphous, and the films grown at 290-340 degreesC were nanocrystalline. The highest refractive index of the films was 2.08 at a wavelength of 580 um. The permittivity of a film grown at 240 degreesC was 25. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：24 / 28

页数：5

共 14 条

[11] ZIRCONIUM DIOXIDE THIN-FILMS DEPOSITED BY ALE USING ZIRCONIUM TETRACHLORIDE AS PRECURSOR [J].