Ab initio study of the structural, electronic, optical and elastic properties of promising optoelectronic and thermoelectric compounds MgSc2X4 (X = S; Se)

被引:6
作者
Pham, Khang D. [1 ,2 ]
Batouche, M. [3 ]
Mohammed, D. E. Si [3 ]
Seddik, T. [3 ]
Vu, Tuan V. [4 ,5 ]
Vo, Dat D. [4 ,5 ]
Hieu, Nguyen N. [6 ,7 ]
Khyzhun, O. Y. [8 ]
机构
[1] Ton Duc Thang Univ, Adv Inst Mat Sci, Lab Appl Phys, Ho Chi Minh City, Vietnam
[2] Ton Duc Thang Univ, Fac Appl Sci, Ho Chi Minh City, Vietnam
[3] Mascara Univ, Lab Phys Quant Mat & Modelisat Math LPQ3M, Mascara 29000, Algeria
[4] Ton Duc Thang Univ, Inst Computat Sci, Div Computat Phys, Ho Chi Minh City, Vietnam
[5] Ton Duc Thang Univ, Fac Elect & Elect Engn, Ho Chi Minh City, Vietnam
[6] Duy Tan Univ, Inst Res & Dev, Da Nang 550000, Vietnam
[7] Duy Tan Univ, Fac Nat Sci, Da Nang 550000, Vietnam
[8] Natl Acad Sci Ukraine, Frantsevych Inst Problems Mat Sci, 3 Krzhyzhanivsky St, UA-03142 Kiev, Ukraine
关键词
DET calculation; Electronic structure; Optical properties; Elastic properties; Thermoelectric properties;
D O I
10.1016/j.jssc.2020.121763
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
In this paper, we study theoretically the structural, electronic, optical, elastic and thermoelectric properties of MgSc2X4 (X = S; Se) compounds using first-principles calculations. The calculated band structure reveals that MgSc2S4 and MgSc2S4 are direct-gap semiconductors. The optical features of MgSc2S4 and MgSc2S4 as functions of photon energy were calculated for energy range of 0-20 eV. MgSc2X4 (X = S; Se) are promising optoelectronic, and thermoelectric compounds whose absorption rates can reach 4 orders of magnitude in the visible range, and 6 orders of magnitude in ultraviolet range. Both chalcogenides possess high brittleness with the Pugh's ratio (B/G), and Cauchy pressure C-12 - C-44 of 1.60 and -4.485 GPa (for MgSc2S4); 1.61 and -3.655 GPa (for MgSc2S4). MgSc2S4 and MgSc2S4 reveal similar ZT, values. The obtained properties of MgSc2X4 (X = S; Se) are well confirmed by experimental results.
引用
收藏
页数:9
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