Photovoltaic effect in Schottky junction of poly(3-alkylthiophene)/Al with various alkyl chain lengths and regioregularities

被引：18
|
作者：
Kaneto, K [1 ]
Takayama, K
Takashima, W
Endo, T
Rikukawa, M
机构：
[1] Kyushu Inst Technol, Dept Comp Sci & Elect, Iizuka, Fukuoka 8208502, Japan
[2] Sophia Univ, Dept Chem, Chiyoda Ku, Tokyo 1028554, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 2A期
关键词：
photovoltaic effect; poly(3-alkylthiophene); regioregularity; carrier generation; photocurrent spectra;
D O I：
10.1143/JJAP.41.675
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Photovoltaic effects of the Schottky junction cell consisting of indium tin oxide/poly(3-alkylthiophene) (PAT) films/Al have been studied as a function of alkyl chain length, regioregularity and film thickness. The photocurrents of the cell based on the excitation spectra with respect to their illumination sides were measured in order to elucidate the carrier generation mechanisms. It,vas found that the enhanced photocurrent is observed upon illumination of the At side for shorter alkyl side chain lengths and highly regioregular PAT. The results have been discussed through a model in which the carrier generation occurs predominantly at the depletion layer of the Schottky junction with a typical thickness of approximately 60 run.
引用
收藏
页码：675 / 679
页数：5
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