A 1.8 GHz CMOS low-noise amplifier

被引：0

作者：

Debono, CJ ^{[1
]}

Maloberti, F ^{[1
]}

Micallef, J ^{[1
]}

机构：

[1] Univ Malta, Dept Microelect, Msida, Malta

来源：

ICECS 2001: 8TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS I-III, CONFERENCE PROCEEDINGS | 2001年

关键词：

D O I：

10.1109/ICECS.2001.957410

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

A 1.8 GHz low-noise amplifier has been designed and fabricated in a standard 0.35 mum CMOS process. Measurement results indicate that the amplifier has a forward gain (S21) of 10.5 dB and a noise figure of 3.94 dB, while consuming 40 mW from a 2.5 V supply.

引用

页码：1111 / 1114

页数：4

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