A 1.8 GHz CMOS low-noise amplifier

被引：0
作者：
Debono, CJ [1 ]
Maloberti, F [1 ]
Micallef, J [1 ]
机构：
[1] Univ Malta, Dept Microelect, Msida, Malta
来源：
ICECS 2001: 8TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS, VOLS I-III, CONFERENCE PROCEEDINGS | 2001年
关键词：
D O I：
10.1109/ICECS.2001.957410
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
A 1.8 GHz low-noise amplifier has been designed and fabricated in a standard 0.35 mum CMOS process. Measurement results indicate that the amplifier has a forward gain (S21) of 10.5 dB and a noise figure of 3.94 dB, while consuming 40 mW from a 2.5 V supply.
引用
收藏
页码：1111 / 1114
页数：4
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