Low frequency noise as a tool for diagnostic of ESD degraded GaAs mesfets

In order to investigate degradation under ESD handling condition, commercial GaAs MESFET's were stressed with high voltage pulses of 0.7 to 3 kV applied to the gate or to the drain in an ESD experiment using standard ESD simulator test (Human Body Model - HBM). MESFET degradations were identified by IN characteristics changes and low frequency (I-F) noise measurements used as a tool for degradation diagnostic. Two modes of degradation: drain current increase (Cl) and drain current decrease (CD) were observed. LF noise results have shown that most of the degradation originate by defects generated during ESD stress in space charge region of Schottky gate contact.