STM study of a Pb/Si(111) interface at room and low temperatures

被引：63

作者：

Slezák, J ^{[1
]}

Mutombo, P ^{[1
]}

Cháb, V ^{[1
]}

机构：

[1] Acad Sci Czech Republ, Inst Phys, Prague 16253, Czech Republic

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.60.13328

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The coexistence of Si(111)-(1X1)-Pb and Si0.28Pb0.72/Si(111) phases was investigated using scanning tunneling microscopy. Reversible phase transition Si(111)-(1x1)-Pb<-->Si(111)-c(5 X root 3)-Pb at T(C)approximate to -30 degrees C was observed. Simultaneously, small regions with surface charge ordered states were found on Si0.28Pb0.7/Si(111) indicating a charge density wave phase transition. Both phases were found to be stable in the temperature interval from T approximate to -240 degrees C up to T-C. [S0163-1829(99)10233-1].

引用

页码：13328 / 13330

页数：3

共 10 条

[1] Charge rearrangement in the GexPb1-x/Ge(111) interface [J].

Carpinelli, JM ;

Weitering, HH ;

Plummer, EW .

SURFACE SCIENCE, 1998, 401 (03) :L457-L463

[2] Surface charge ordering transition: alpha phase of Sn/Ge(111) [J].

Carpinelli, JM ;

Weitering, HH ;

Bartkowiak, M ;

Stumpf, R ;

Plummer, EW .

PHYSICAL REVIEW LETTERS, 1997, 79 (15) :2859-2862

[3] Direct observation of a surface charge density wave [J].

Carpinelli, JM ;

Weitering, HH ;

Plummer, EW ;

Stumpf, R .

NATURE, 1996, 381 (6581) :398-400

[4] GROWTH AND MORPHOLOGY OF PB ON SI(111) [J].

GANZ, E ;

HWANG, IS ;

XIONG, FL ;

THEISS, SK ;

GOLOVCHENKO, J .

SURFACE SCIENCE, 1991, 257 (1-3) :259-273

[5] Scanning tunneling microscopy study of the Si(111)-(root 3x root 3)-Pb mosaic phase [J].

GomezRodriguez, JM ;

Veuillen, JY ;

Cinti, RC .

SURFACE SCIENCE, 1997, 377 (1-3) :45-49

[6] ELECTRONIC-STRUCTURE OF LOCALIZED SI DANGLING-BOND DEFECTS BY TUNNELING SPECTROSCOPY [J].

HAMERS, RJ ;

DEMUTH, JE .

PHYSICAL REVIEW LETTERS, 1988, 60 (24) :2527-2530

[7] SOFT INCOMMENSURATE RECONSTRUCTION ON PB/SI(111) - STRUCTURE, STRESS MODULATION, AND PHASE-TRANSITION [J].

HWANG, IS ;

MARTINEZ, RE ;

LIU, C ;

GOLOVCHENKO, JA .

PHYSICAL REVIEW B, 1995, 51 (15) :10193-10196

[8] PHASE-TRANSITION OF MONOLAYER PB/GE(111) - BETA-ROOT-3X-ROOT-3R 30-DEGREES[--]1X1 AT SIMILAR-TO 180-DEGREES-C [J].

HWANG, IS ;

GOLOVCHENKO, JA .

PHYSICAL REVIEW B, 1994, 50 (24) :18535-18542

[9] BEHAVIOR OF INDIUM ON THE SI(111)7X7 SURFACE AT LOW-METAL COVERAGE [J].

NOGAMI, J ;

PARK, SI ;

QUATE, CF .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1479-1482

[10] STRUCTURAL STUDY OF THE CLOSE-PACKED 2-DIMENSIONAL PHASES OF PB ON GE(111) AND SI(111) [J].

SEEHOFER, L ;

FALKENBERG, G ;

DABOUL, D ;

JOHNSON, RL .

PHYSICAL REVIEW B, 1995, 51 (19) :13503-13515

← 1 →