R&D of 1200V SiC MOSFETs with Nitrided Gate Oxide and Self-aligned Channel Technology

被引：0
|
作者：
Peng, Zhaoyang [1 ,3 ]
Shen, Huajun [1 ,3 ]
Chen, Hong [1 ,3 ]
Bai, Yun [1 ,3 ]
Tang, Yidan [1 ,3 ]
Wang, Yiyu [1 ,2 ,4 ]
Chen, Ximing [2 ,4 ]
Li, Chengzhan [2 ,4 ]
Liu, Kean [2 ,4 ]
Liu, Xinyu [1 ,3 ]
机构：
[1] Chinese Acad Sci, Inst Microelect, Microwave Device & IC Dept, Beijing, Peoples R China
[2] Zhuzhou CRRC Times Elect Co Ltd, Zhuzhou, Peoples R China
[3] 3 Beitucheng West Rd, Beijing, Peoples R China
[4] Shidai Rd, Zhuzhou, Hunan, Peoples R China
来源：
2016 13TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING: INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS) | 2016年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The fabrication of 1200V SiC MOSFET with developed nitrided gate oxide and self-aligned channel technology are reported. Post-oxidation annealing in nitrogen-contained ambient can effectively passivate defects at the SiC/SiO2 interface which is beneficial for the mobility improvement in SiC MOSFETs. The process of nitridation begins from the conduction band and extends to the mid-band-gap gradually. Our newly developed self-aligned channel technology, where side wall and poly-silicon are used as mask instead of traditional metal mask, is efficient in shortening the MOSFET channel to half micro, which helps reduce the channel length of the device. With these two technologies mentioned above, 1200V SiC MOSFET is fabricated based on our own process line. And the current capability increases markedly after gate oxide nitridation and self-aligned channel treatment.
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页码：46 / 49
页数：4
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