Improvement of deep submicron buried-channel p-MOSFET by as and P co-implantation for punchthrough stopper

被引：0
|
作者：
Son, J [1 ]
Lee, SD [1 ]
Huh, K [1 ]
Hwang, J [1 ]
机构：
[1] LG SEMICON LTD LTD,ULSI LAB,HUNGDUK GU,CHEONGJU 360480,SOUTH KOREA
来源：
1996 54TH ANNUAL DEVICE RESEARCH CONFERENCE DIGEST | 1996年
关键词：
D O I：
10.1109/DRC.1996.546298
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：18 / 19
页数：2
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