Controllable Band Alignment Transition in InSe-MoS2 Van der Waals Heterostructure

被引：33

作者：

Chen, Xi ^{[1
]}

Lin, Zheng-Zhe ^{[1
]}

Ju, Ming ^{[2
]}

机构：

[1] Xidian Univ, Sch Phys & Optoelect Engn, Xian 710071, Shaanxi, Peoples R China

[2] Shanghai Tech Inst Elect & Informat, Sch Econ & Management, Shanghai 20001820141, Peoples R China

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2018年 / 12卷 / 07期

关键词：

controllable band alignment; type-III transition; two-dimensional van der Waals heterojunctions; 2-DIMENSIONAL MATERIALS; ELECTRON-MOBILITY; FIELD; LAYER; PHOTODETECTORS; DYNAMICS; GRAPHENE;

D O I：

10.1002/pssr.201800102

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Van der Waals (vdW) heterojunctions with type-II band alignment, in which electrons and holes are localized in distinct layers, play a central role in optoelectronic devices and solar cells. The present study analyzes a type-III band alignment transition in InSe-MoS2 vdW heterostructure, proposed to be controlled via changing interlayer distance or applying perpendicular external electric field. The band position shift of InSe relative to that of MoS2 attributes to a surface polarization mechanism. Changing band offset into type II facilitates possible use and allows greater flexibility for band engineering of InSe-MoS2 heterostructure in optoelectronic and solar energy applications. The present findings provide theoretical guidance to a new approach to improve the optoelectronic properties of vdW heterostructures.

引用

页数：6

共 49 条

[21] Photoinduced doping in heterostructures of graphene and boron nitride [J].

Jun, L. ;

Velasco, J., Jr. ;

Huang, E. ;

Kahn, S. ;

Nosiglia, C. ;

Tsai, Hsin-Zon ;

Yang, W. ;

Taniguchi, T. ;

Watanabe, K. ;

Zhang, Y. ;

Zhang, G. ;

Crommie, M. ;

Zettl, A. ;

Wang, F. .

NATURE NANOTECHNOLOGY, 2014, 9 (05) :348-352

[22] Van der Waals density functionals applied to solids [J].

Klimes, Jiri ;

Bowler, David R. ;

Michaelides, Angelos .

PHYSICAL REVIEW B, 2011, 83 (19)

[23] Chemical accuracy for the van der Waals density functional [J].

Klimes, Jiri ;

Bowler, David R. ;

Michaelides, Angelos .

JOURNAL OF PHYSICS-CONDENSED MATTER, 2010, 22 (02)

[24] Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles [J].

Komsa, Hannu-Pekka ;

Krasheninnikov, Arkady V. .

PHYSICAL REVIEW B, 2013, 88 (08)

[25] The New Skinny in Two-Dimensional Nanomaterials [J].

Koski, Kristie J. ;

Cui, Yi .

ACS NANO, 2013, 7 (05) :3739-3743

[26] Interlayer Excitons and Band Alignment in MoS2/hBN/WSe2 van der Waals Heterostructures [J].

Latini, Simone ;

Winther, Kirsten T. ;

Olsen, Thomas ;

Thygesen, Kristian S. .

NANO LETTERS, 2017, 17 (02) :938-945

[27]

Lee CH, 2014, NAT NANOTECHNOL, V9, P676, DOI [10.1038/NNANO.2014.150, 10.1038/nnano.2014.150]

[28] An Atomically Layered InSe Avalanche Photodetector [J].

Lei, Sidong ;

Wen, Fangfang ;

Ge, Liehui ;

Najmaei, Sina ;

George, Antony ;

Gong, Yongji ;

Gao, Weilu ;

Jin, Zehua ;

Li, Bo ;

Lou, Jun ;

Kono, Junichiro ;

Vajtai, Robert ;

Ajayan, Pulickel ;

Halas, Naomi J. .

NANO LETTERS, 2015, 15 (05) :3048-3055

[29] Tuning the Schottky barrier in the arsenene/graphene van der Waals heterostructures by electric field [J].

Li, Wei ;

Wang, Tian-Xing ;

Dai, Xian-Qi ;

Wang, Xiao-Long ;

Ma, Ya-Qiang ;

Chang, Shan-Shan ;

Tang, Ya-Nan .

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2017, 88 :6-10

[30] Bandgap engineering of different stacking WS2 bilayer under an external electric field [J].

Li, Wei ;

Wang, Tianxing ;

Dai, Xianqi ;

Wang, Xiaolong ;

Zhai, Caiyun ;

Ma, Yaqiang ;

Chang, Shanshan .

SOLID STATE COMMUNICATIONS, 2016, 225 :32-37

← 1 2 3 4 5 →