Controllable Band Alignment Transition in InSe-MoS2 Van der Waals Heterostructure

被引：33

作者：

Chen, Xi ^{[1
]}

Lin, Zheng-Zhe ^{[1
]}

Ju, Ming ^{[2
]}

机构：

[1] Xidian Univ, Sch Phys & Optoelect Engn, Xian 710071, Shaanxi, Peoples R China

[2] Shanghai Tech Inst Elect & Informat, Sch Econ & Management, Shanghai 20001820141, Peoples R China

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2018年 / 12卷 / 07期

关键词：

controllable band alignment; type-III transition; two-dimensional van der Waals heterojunctions; 2-DIMENSIONAL MATERIALS; ELECTRON-MOBILITY; FIELD; LAYER; PHOTODETECTORS; DYNAMICS; GRAPHENE;

D O I：

10.1002/pssr.201800102

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Van der Waals (vdW) heterojunctions with type-II band alignment, in which electrons and holes are localized in distinct layers, play a central role in optoelectronic devices and solar cells. The present study analyzes a type-III band alignment transition in InSe-MoS2 vdW heterostructure, proposed to be controlled via changing interlayer distance or applying perpendicular external electric field. The band position shift of InSe relative to that of MoS2 attributes to a surface polarization mechanism. Changing band offset into type II facilitates possible use and allows greater flexibility for band engineering of InSe-MoS2 heterostructure in optoelectronic and solar energy applications. The present findings provide theoretical guidance to a new approach to improve the optoelectronic properties of vdW heterostructures.

引用

页数：6

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