Influence of microstructure on the cutting behaviour of silicon

被引:172
作者
Goel, Saurav [1 ]
Kovalchenko, Andrii [2 ]
Stukowski, Alexander [3 ]
Cross, Graham [4 ,5 ]
机构
[1] Queens Univ, Sch Mech & Aerosp Engn, Belfast BT9 5AH, Antrim, North Ireland
[2] Natl Acad Sci, Inst Problems Mat Sci, UA-03142 Kiev, Ukraine
[3] Tech Univ Darmstadt, Inst Mat Sci, D-64287 Darmstadt, Germany
[4] Trinity Coll Dublin, Sch Phys, CRANN Nanosci Inst, Dublin 2, Ireland
[5] Adama Innovat Ltd, Dublin 2, Ireland
基金
爱尔兰科学基金会;
关键词
MD simulation; Silicon; Diamond; Nanometric cutting; Uniaxial tensile testing; MOLECULAR-DYNAMICS SIMULATION; SINGLE-CRYSTAL SILICON; TO-DUCTILE TRANSITION; MONOCRYSTALLINE SILICON; PHASE-TRANSFORMATIONS; DISLOCATION EMISSION; NANOINDENTATION; PLASTICITY; MECHANISM; LEADS;
D O I
10.1016/j.actamat.2015.11.046
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We use molecular dynamics simulation to study the mechanisms of plasticity during cutting of mono crystalline and polycrystalline silicon. Three scenarios are considered: (i) cutting a single crystal silicon workpiece with a single crystal diamond tool, (ii) cutting a polysilicon workpiece with a single crystal diamond tool, and (iii) cutting a single crystal silicon workpiece with a polycrystalline diamond tool. A long-range analytical bond order potential is used in the simulations, providing a more accurate picture of the atomic-scale mechanisms of brittle fracture, ductile plasticity, and structural changes in silicon. The MD simulation results show a unique phenomenon of brittle cracking typically inclined at an angle of 45 degrees-55 degrees to the cut surface, leading to the formation of periodic arrays of nanogrooves in mono crystalline silicon, which is a new insight into previously published results. Furthermore, during cutting, silicon is found to undergo solid-state directional amorphisation without prior Si-I to Si-II (beta tin) transformation, which is in direct contrast to many previously published MD studies on this topic. Our simulations also predict that the propensity for amorphisation is significantly higher in single crystal silicon than in polysilicon, signifying that grain boundaries eases the material removal process. Crown Copyright (C) 2015 Published by Elsevier Ltd on behalf of Acta Materialia Inc. All rights reserved.
引用
收藏
页码:464 / 478
页数:15
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