Exploratory Study of Resistive Random Access Memory (R-RAM) Scaling beyond 10nm

被引：0

作者：

Ho, ChiaHua ^{[1
]}

Yang, Fu-Liang ^{[1
]}

机构：

[1] NARL, NDL, Hsinchu, Taiwan

来源：

2012 12TH ANNUAL NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM | 2012年

关键词：

Transition Metal Oxide; Resistive Random Access Memory; R-RAM;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We successfully demonstrate both WOx and HfOx based Transition Metal Oxide Resistive Random Access Memory (TMO R-RAM) devices with sub-10nm scaling. Contrary to similar results of large R-RAM devices, scaled WOx and HfOx devices beyond 10nm exhibit obvious differences on operation windows and thermal stabilities. Instead of reported conventional large scale TMO R-RAM, different boundary conditions of WOx and HfOx devices plays a dominant role of R-RAM switching mechanism between 5 and 10nm.

引用

页码：22 / 24

页数：3

共 10 条

[1]

[Anonymous], 2010, IEDM, DOI DOI 10.1109/IEDM.2010.5703389

[2]

Baek I.G., 2011, IEDM, P737, DOI DOI 10.1109/IEDM.2011.6131654

[3]

Bersuker G, 2010, INT EL DEVICES MEET

[4]

Chen Hou-Yu, 2009, IEEE IEDM, V28.7, P958

[5]

Govoreanu B, 2011, 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)

[6] A highly reliable self-aligned graded oxide WOx resistance memory:: Conduction mechanisms and reliability [J].

Ho, ChiaHua ;

Lai, E. K. ;

Lee, M. D. ;

Pan, C. L. ;

Yao, Y. D. ;

Hsieh, K. Y. ;

Liu, Rich ;

Lu, C. Y. .

2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2007, :228-+

[7]

Kawahara A., 2012, IEEE ISSCC, P25

[8]

Kim MJ, 2010, INT EL DEVICES MEET

[9] Conduction and Low-Frequency Noise Analysis in Al/α-TiOX/Al Bipolar Switching Resistance Random Access Memory Devices [J].

Lee, Jung-Kyu ;

Jeong, Hu Young ;

Cho, In-Tak ;

Lee, Jeong Yong ;

Choi, Sung-Yool ;

Kwon, Hyuck-In ;

Lee, Jong-Ho .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (06) :603-605

[10]

Tseng T.Y, 2012, NONVOLATILE MEMORIES

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