Influence of radio frequency sputtering power towards the properties of indium zinc oxide semiconducting films

被引：17
作者：
Aw, K. C. [1 ]
Tsakadze, Z. [2 ]
Lohani, A. [2 ]
Mhaisalkar, S. [2 ]
机构：
[1] Univ Auckland, Dept Mech Engn, Auckland 1010, New Zealand
[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore, Singapore
来源：
SCRIPTA MATERIALIA | 2009年 / 60卷 / 01期
关键词：
Indium zinc oxide; IZO; R.f. magnetron sputtering; THIN-FILMS; TRANSPARENT; RESISTIVITY; PARAMETERS; R.F;
D O I：
10.1016/j.scriptamat.2008.08.039
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We studied the influence of radio frequency (r.f.) power of a sputtering system towards the physical, electrical and optical properties of IZO semiconducting film with an Ar/O-2 gas mixture. Nodules are present when sputtered at 1.8 W cm(-2). Resistivity is lowest and mobility highest at low r.f. power. The Zn2In2O5 crystallite influences the film's resistivity and mobility. The optical transparency is >80%, while the optical band gap ranges from 3.0 to 3.15 eV and is dependent to the r.f. power. (C) 2008 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：48 / 51
页数：4
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