Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates

被引：22
作者：
Kang, BS
Ren, F
Irokawa, Y
Baik, KW
Pearton, SJ [1 ]
Pan, CC
Chen, GT
Chyi, JI
Ko, HJ
Lee, HY
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[4] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
[5] Samsung Corning, Gyeonnggido 442732, South Korea
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 02期
关键词：
D O I：
10.1116/1.1689303
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The performance of Schottky rectifiers fabricated with dielectric overlap edge termination on epitaxial layers grown on a free-standing GaN template is reported. The power figure-of-merit (V-B)(2)/R-ON where V-B is the reverse breakdown voltage and R-ON is the on-state resistance was 11.5 MW cm(-2). The forward turn-on voltage was similar to3.5 V at 25degreesC, with an on-state resistance of similar to5 x 10(-3) Omega cm(2). The reverse recovery time was less than or equal to 50 ns in switching from forward bias to reverse bias. The reverse breakdown showed a temperature coefficient of -0.45 V/C. (C) 2004 American Vacuum Society.
引用
收藏
页码：710 / 714
页数：5
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